THE FACT ABOUT N TYPE GE THAT NO ONE IS SUGGESTING

≤ 0.fifteen) is epitaxially grown on the SOI substrate. A thinner layer of Si is grown on this SiGe layer, then the composition is cycled through oxidizing and annealing levels. Mainly because of the preferential oxidation of Si in excess of Ge [sixty eight], the first Si1–With improved performance due to the higher absorption of germanium in p